德国慕尼黑工业大学
Technical University of Munich（TUM）
Martin Stutzmann教授于1983年获德国马尔堡大学物理学博士学位，1983-1985年在美国施乐帕洛阿尔托研究中心作为博士后研究员。研究领域涉及半导体的生长、掺杂、改性以及材料负载等。现任德国慕尼黑工业大学瓦尔特肖特基研究所实验半导体物理系主任，德国慕尼黑工业大学催化研究中心首席研究员。Stutzmann教授在半导体材料领域具有卓越影响力，曾长期担任physica status solidi (a), (b), (c)以及Rapid Research Letters的主编，曾获德国物理学会瓦尔特肖特基奖、德国亚历山大・冯・洪堡基金会维尔纳・海森堡奖章，当选美国物理学会会士。
个人主页：www.wsi.tum.de/E25
部分发表文章：
(1) M. Stutzmann, J. A. Garrido, M. Eickhoff, and M. S. Brandt, “Direct biofunctionalization of semiconductors: a survey”, phys. sat. sol. (a) 203, 3424 (2006)
(2) A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmüller, M. S. Brandt, and M. Stutzmann, “Electronic transport in phosphorus-doped silicon nanocrystal networks”,
Phys. Rev. Lett. 100, 026803 (2008)
(3) J. Howgate, S. Schoell, M. Hoeb, W. Steins, B. Baur, S. Hertrich, B. Nickel, I. D. Sharp, M. Stutzmann and M. Eickhoff, “Photocatalytic cleavage of self-assembled organic monolayers by UV-induced charge transfer from GaN substrates”, Adv. Mater. 22, 2632 (2010)
(4) S. Niesar, R. N. Pereira, A. R. Stegner, N. Erhard, M. Hoeb, A. Baumer, H. Wiggers, M. S. Brandt, and M. Stutzmann, “Low-cost post-growth treatments of crystalline silicon nanoparticles improving surface and electronic properties”, Adv. Funct. Mat. 22, 1190 (2012)
(5) F. Schuster, F. Furtmayr, R. Zamani, C. Magén, J. R. Morante, J. Arbiol, J. A. Garrido, and M. Stutzmann, “Self-Assembled GaN Nanowires on Diamond” Nano Lett. 12, 2199 (2012)
(6) S. Schäfer, S. A. Wyrzgol, R. Caterino, A. Jentys, S. J. Schoell, M. Hävecker, A. Knop-Gericke, J. A. Lercher, I. D. Sharp and M. Stutzmann, “Platinum Nanoparticles on Gallium Nitride Surfaces: Effect of Semiconductor Doping on Nanoparticle Reactivity”, J. Am. Chem. Soc. 134, 12528 (2012)
(7) W. Aigner, S. Niesar, E. Mehmedovic, M. Opel, F. E. Wagner, H. Wiggers, and M. Stutzmann, “Separation of semiconducting and ferromagnetic FeSi2-nanoparticles by magnetic filtering”, J. Appl. Phys. 114, 134308 (2013)
(8) F. Schuster, B. Laumer, R. R. Zamani, C. Magén, J. R. Morante, J. Arbiol and M. Stutzmann, “p-GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity”, ACS Nano 8, 4376 (2014)
(9) A. Winnerl, R. N. Pereira, and M. Stutzmann, “Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures”, J. Appl. Phys. 118, 155704 (2015)
(10) M. Hetzl, M. Kraut, J. Winnerl, L. Francaviglia, M. Doeblinger, S. Matich, A Fontcuberta i Morral, M. Stutzmann, “Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures”, Nano Lett. 16, 7098 (2016)
责任编辑：魏健
