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Steffen教授课题组在Advanced Functional Materials上发表论文
发布时间:2019-11-08 点击:10

题目:

Direct Observation of Conductive Polymer Induced Inversion Layer in n-Si and Correlation to Solar Cell Performance


作者:

Rongbin Wang, Yusheng Wang, Chen Wu, Tianshu Zhai, Jiacheng Yang, Baoquan Sun,* Steffen Duhm,* and Norbert Koch*


单位:

1Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-AiRoad, Suzhou 215123, China.

2Joint International Research Laboratory of Carbon-Based Functional Materials and Devices and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices

3Institut für Physik and IRIS Adlershof Humboldt-Universität zu Berlin Brook-Taylor-Str. 6, 12489 Berlin, Germany

4Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Albert-Einstein Str. 15, 12489 Berlin, Germany


摘要:

Heterojunctions formed by ultrathin conductive polymer [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) - PEDOT:PSS] films and n-type crystalline silicon are investigated by photoelectron spectroscopy. Large shifts of Si 2p core levels upon PEDOT:PSS deposition provide evidence that a dopant-free p-n junction, i.e., an inversion layer, is formed within Si. Among the investigated PEDOT:PSS formulations, the largest induced band bending within Si (0.71 eV) is found for PH1000 (high PEDOT content) combined with a wetting agent and the solvent additive dimethyl sulfoxide (DMSO). Without DMSO, the induced band bending is reduced, as is also the case for a PEDOT:PSS formulation with higher PSS content. The interfacial energy level alignment correlates well with the characteristics of PEDOT:PSS/n-Si solar cells, where high polymer conductivity and Si-passivation are also required to achieve high power conversion efficiency.


影响因子:

15.621

分区情况:

一区


链接:

https://www.onlinelibrary.wiley.com/doi/10.1002/adfm.201903440



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