Presenter: Prof. Martin Stutzmann (Technische Universität München (TUM), Germany)
Topic: The influence of structural disorder on the properties of semiconductors
Time: 9:00 AM, March 13th (Wednesday)
Location: 909-B
Biography:
Current Position(s)
1993 – today Chair of Experimental Semiconductor Physics and Director, Walter Schottky Institut and Physics Department, TUM
2009 – today Principal Investigator, Catalysis Research Center, TUM
Education
1990 Habilitation, Philipps-Universität Marburg, Germany
1983 PhD in Physics, Philipps-Universität Marburg, Germany
(Supervisor: Prof. Josef Stuke)
1982 Diploma in Physics, Philipps-Universität Marburg, Germany
1980 Licence de Physique, University Paris VII, France
Fellowships & Awards
1976 Fellow, Studienstiftung des Deutschen Volkes, Germany
1988 Walter-Schottky-Prize, German Physical Society, Germany
1999 Sir Nevill Mott Lecture, Int. Conf. Amorphous and Microcryst. Semicond., USA
2006 Fellow, American Physical Society, USA
2014 Werner Heisenberg Medal, Alexander von Humboldt-Foundation, Germany
Contact: Prof. Lifeng Chi
Editor:Xiaoyu Jin
