题目：

Memory Phototransistors based on Exponential-Association Photoelectric Conversion Law

作者：

Zhibin Shao¹, Tianhao Jiang¹, Xiujuan Zhang¹, Xiaohong Zhang^1*, Xiaofeng Wu¹, Feifei Xia², Shiyun Xiong¹, Shuit-Tong Lee^1* & Jiansheng Jie^1*

单位：

¹Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.

²School of Chemical and Environmental Engineering, Jiangsu University of Technology, Changzhou, Jiangsu, 213001, P. R. China.

摘要：

Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of   their high operating voltage and bulky size. Herein, we develop a memory phototransistor for ultraweak light detection, by exploiting the charge-storage accumulative effect in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the memory phototransistors exhibit ultrahigh responsivity of 3.8 × 10⁹   A W⁻¹ and detectivity of 7.7 × 10²² Jones. As a result, the memory phototransistors are able to detect ultraweak light of 6 nW cm⁻² with an extremely high sensitivity of 4 × 10⁷. The proposed memory phototransistors offer a design concept for ultraweak light sensing devices.

影响因子：

12.353

分区情况：

二区

链接：

https://www.nature.com/articles/s41467-019-09206-w