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康振辉教授课题组与中科院上海微系统与信息技术研究所合作在Advanced Materials上发表文章
发布时间:2017-5-31 10:30:55 点击:

题目:

C3N—A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties

 

 

作者:

Siwei Yang,a Wei Li,ab Caichao Ye,a Gang Wang,a He Tian,c Chong Zhu,a Peng He,a Guqiao Ding,*a Xiaoming Xie,*ad Yang Liu,e Yeshayahu Lifshitz,ef Shuit-Tong Lee,*e Zhenhui Kang,*e and Mianheng Jiangad

 

 

单位:

a State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road, Shanghai 200050, P. R. China

b Department of Physics and State Key Laboratory of Surface Physics Fudan University Shanghai 200433, China

c Center of Electron Microscopy and State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027, P. R. China

d School of Physical Science and Technology Shanghai Tech University Shanghai 200031, P. R. China

e Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Institute of Functional Nano and Soft Materials (FUNSOM) Soochow University Suzhou 215123, P. R. China

f Department of Materials Science and Engineering Technion Israel Institute of Technology Haifa 3200003, Israel

 

 

摘要:

Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large-scale synthesis of C3N, a 2D crystalline, hole-free extension of graphene, its structural characterization, and some of its unique properties. C3N is fabricated by polymerization of 2,3-diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D6h-symmetry. C3N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back-gated field-effect transistors made of single-layer C3N display an on–off current ratio reaching 5.51010. Surprisingly, C3N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications.

 

 

影响因子:

18.96

 

 

分区情况:

1

 

 

链接:  

http://onlinelibrary.wiley.com/doi/10.1002/adma.201605625/epdf

 

 

责任编辑:向丹婷 联系方式dtxiang@suda.edu.cn



                                           



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