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唐建新教授课题组在Optical Materials Express上发表论文
发布时间:2017-8-7 12:06:00 点击:

题目:

Highly Efficient Quantum-Dot Light Emitting Diodes with Sol-Gel ZnO Electron Contact


作者:

Yue-Qi Liu,1 Dan-Dan Zhang,1,* Huai-Xin Wei,2 Qing-Dong Ou,1 Yan-Qing Li,1 and Jian-Xin Tang1


单位:

1 Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China

2 Jiangsu Key Laboratory for Environment Functional Materials, School of Chemical Biology and Materials Engineering, Suzhou University of Science and Technology, Suzhou 215009, China


摘要:

We demonstrated an efficient inverted CdSe/CdS/ZnS quantum dot light emitting diode (QLED) using sol-gel ZnO (s-ZnO) as the electron-injection layer (EIL). The device performance is comparable to that of a device based on the common used nanoparticle ZnO (n-ZnO) EIL. The peak efficiency (12.5 cd/A) and luminance (13000 cd/m2) for the s-ZnO based device was found to be similar to the n-ZnO based device (11.2 cd/A and 15000 cd/m2). The morphology properties of these two types of ZnO films were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. A very smooth surface was achieved for the s-ZnO film. Moreover, the quantum dot (QD) layer on the s-ZnO also possesses high quality with a close packed structure.


影响因子

2.591


分区情况:

一区


链接:

https://www.osapublishing.org/ome/abstract.cfm?uri=ome-7-7-2161




责任编辑:向丹婷



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