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冯敏强教授课题组在Journal of Materials Chemistry C上发表论文
发布时间:2017-12-1 13:59:31 点击:

题目

Cu-Doped Nickel Oxide Prepared using a Low Temperature Combustion Method as a Hole Injection Layer for High-performance OLEDs

 

作者

Yi-Huan Li,a Xun Lu, a Rongbin Wang,a Yu-Yang Ma,a Steffen Duhm,a Man-Keung Fung*a,b

 

单位

aJiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano& Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P.R. China.

bInstitute of Organic Optoelectronics, Jiangsu Industrial Technology   Research Institute (JITRI), 1198 Fenhu Dadao, Wujiang, Suzhou, Jiangsu,  P.R. China

 

摘要

Solution-processed Cu doped nickel oxide (Cu-NiOx) is used as a hole injection layer (HIL) in phosphorescent green organic light-emitting diodes (OLEDs). Hole injection materials are very important for achieving high performance OLEDs. Herein, solution-processed Cu doped NiOx prepared using a combustion method is demonstrated as the HIL in OLEDs. Nickel oxide (NiOx) thin films incorporated with p-type Cu dopants resulted in a significantly improved conductivity and hole-injection capability. The UV-ozone treated NiOx shows significantly better hole injection than that without being treated by UV-ozone. Our results show that phosphorescent green OLEDs with UV-ozone treated Cu:NiOx show a maximum current efficiency of 85.3 cd A-1, which is remarkably higher than the conventional device based on poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDO T:PSS) which has a maximum current efficiency of 68.3 cd A-1 .

 

影响因子

5.256

 

分区情况

一区

 

链接

http://pubs.rsc.org/en/content/articlepdf/2017/tc/c7tc03884d?page=search


责任编辑:向丹婷



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