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冯敏强教授课题组在Journal of Materials Chemistry C上发表论文
发布时间:2017-12-7 10:38:55 点击:

题目:

Cu-Doped Nickel Oxide Prepared using a Low-Temperature Combustion Method as a Hole-Injection Layer for High-Performance OLEDs

 

作者:

Yi-HuanLi,Xun Lu,Rongbin Wang,a Yu-Yang Ma,a Steffen Duhm,Man-Keung Fung*,a,b

 

单位:

a.Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano& Soft Materials(FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P.R. China.

b.Institute of Organic Optoelectronics, Jiangsu Industrial Technology Research Institute (JITRI), 1198 Fenhu Dadao, Wujiang, Suzhou, Jiangsu, P.R. China

 

摘要:

Solution-processed Cu doped nickel oxide(Cu-NiOx) is used as a hole injection layer (HIL) inphosphorescent green organic light-emitting diodes(OLEDs). Hole injection materials are very important for achieving high performance OLEDs. Herein, solution-processed Cu doped NiOx prepared using acombustion method is demonstrated as the HIL in OLEDs. Nickel oxide (NiOx) thin films incorporated with p-type Cu dopants resulted in a significantly improved conductivity and hole-injection capability.The UV-ozone treated NiOx shows significantly better hole injection than that without being treated by UV-ozone. Our results show that phosphorescent green OLEDs with UV-ozone treated Cu:NiOx show amaximum current efficiency of 85.3 cd A-1, which is remarkably higher than the conventional devicebased on poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) which has a maximum current efficiency of 68.3 cd A-1.

 

影响因子:

5.256

 

分区情况:

一区

 

链接:

http://pubs.rsc.org/en/content/articlepdf/2017/tc/c7tc03884d?page=search

 

责任编辑:向丹



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