Abstract

<span style="color:#1C1D1E;font-family:" font-size:16px;white-space:normal;background-color:#ffffff;"="">Electron injection plays a crucial role in arousing the double‐slope characteristics for p‐type organic field‐effect transistors (OFETs) with narrow‐bandgap organic semiconductors (OSCs). This issue will not only result in the misrepresentation of OFET performance but also may cause device instability, hence impeding their further development in real‐world applications. A facile and highly efficient approach is developed to circumvent this issue by implementing modification on the electrode/organic semiconductor interface. An ultrathin layer of wide‐bandgap OSC with suitable energy levels is introduced to block the undesirable electron injection. By this means, typical double‐slope behaviors and bias stress stability in the p‐type OFETs can be significantly improved. Using 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene‐based OFETs the double‐slope behaviors of as‐fabricated devices are effectively converted to near‐ideal behaviors after modification, leading to a dramatic improvement of average reliability from 65.11% to 91.76%. Furthermore, the positive drift of transfer curves under prolonged bias stress is also successfully suppressed. This strategy demonstrates good universality and can provide a new guideline for the fabrication of OFETs with ideal behaviors.

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