康振辉教授课题组在Advance Materials上发表文章

康振辉教授课题组在Advance Materials上发表文章

题目：

C₃N—A 2D Crystalline, gole-Free, tunable-narrow-bandgapsemiconductor with ferromagnetic properties

作者：

Siwei Yang,^a Wei Li,^ab Caichao Ye,^a Gang Wang,^a He Tian,^c Chong Zhu,^a Peng He,^aGuqiao Ding,*^a Xiaoming Xie,*^ad Yang Liu,^e Yeshayahu Lifshitz,^ef Shuit-Tong Lee,*^e Zhenhui Kang,*^e and Mianheng Jiang^ad

单位：

^a State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning Road, Shanghai 200050, P. R. China

^b Department of Physics and State Key Laboratory of Surface PhysicsFudan UniversityShanghai 200433, China

^c Center of Electron Microscopy and State Key Laboratoryof Silicon MaterialsSchool of Materials Science and EngineeringZhejiang University Hangzhou 310027, P. R. China

^d School of Physical Science and TechnologyShanghai Tech UniversityShanghai 200031, P. R. China

^e Jiangsu Key Laboratory for Carbon-BasedFunctional Materials and DevicesInstitute of Functional Nanoand Soft Materials (FUNSOM)Soochow UniversitySuzhou 215123, P. R. China

^f Department of Materials Science and EngineeringTechnionIsrael Institute of TechnologyHaifa 3200003, Israel

摘要：

Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possibleapplications. Here the authors report on the controllable large-scale synthesisof C₃N, a 2D crystalline, hole-free extension of graphene, its structuralcharacterization, and some of its unique properties. C₃N is fabricated bypolymerizationof 2,3-diaminophenazine. It consists of a 2D honeycomb latticewith a homogeneous distribution of nitrogen atoms, where both N and Catoms show a D_6h-symmetry. C₃N is a semiconductor with an indirect bandgapof 0.39 eV that can be tuned to cover the entire visible range by fabricationof quantum dots with different diameters. Back-gated field-effect transistorsmade of single-layer C₃N display an on–off current ratio reaching 5.510¹⁰.Surprisingly, C₃N exhibits a ferromagnetic order at low temperatures (<96 K)when doped with hydrogen. This new member of the graphene family opensthe door for both fundamental basic research and possible future applications.

影响因子：

18.96

分区情况：

1区

链接：  

http://onlinelibrary.wiley.com/doi/10.1002/adma.201605625/epdf