Atomic Layer Deposition System(ALD)

Instrument   name

Atomic Layer Deposition   System (ALD)

Model

Savannah-100

Manufacturer

Cambridge   Nano Tech

Specifications

1.Precursor   Source: There are four kinds of precursor sourcs, three of them could be   heated, but the fourth one could not be heated.

2.Sample   Size: Up to 4”

3.Deposition   Temperature: The maximum temperature is ～300 ℃

4.   Carrier Gas: N2, MFC control is 10-1000 sccm.

Function   and applications

Atomic   Layer Deposition System (ALD) is a self-limiting process capable of precise   monolayer growth, which is mainly used for the dielectric layer thin film   deposition in the field of nano field-effect transistor (FET) and organic light   emitting diode (OLED).

Accessories

Mechanical   Pump

Contacts: Wenchang Zhu

Contact   number: 65881259

E-mail: wczhu@suda.edu.cn