Presenter: Prof. EnriqueMiranda ,Universitat Autonoma de Barcelona (Spain)
Topic: Electron transportmechanism in resistive switching devices
Time: 10:00 AM, Mar.15th (Tuesday)
Location: Conference Room B, BLDG909-1F
Abstract
Resistive switching (RS) is a nonvolatileeffect based on the formation and dissolution of filamentary paths, which canreplace the storage of charge principle used by more conventional memorydevices. The effect is observable in a wide variety of oxide materials whenused as insulators in metal�oxide�metal (MIM) or metal-insulator-semiconductor(MIS) capacitor configurations. In the last years, it has been clearlyestablished that the process associated with RS involves the movement of bothions and electrons. In this talk I will present a framework for understandingthe current flow in RS devices using the Landauer approach. In this case, thefilamentary pathways across the dielectric films area can be considered asnanowires with a certain transmission probability, which depends on the size ofthe narrowest point along the constriction. When this probability reaches theunity value, the conductance becomes quantized in units of G0=2e2/h, i.e. thequantum conductance unit (with e theelectron charge and h the Planck’sconstant). According to theory, non-integer values of G0 are also likely. Theinformation is always represented in the form of histograms. This theoreticalapproach will be validated by fitting different types of experimental curves. Toconclude, I will show how this model can be electrically represented by moreconventional components, including the hysteretic effect, and used in circuitsimulators.
Biography
Dr. Enrique Miranda is a Professor at the Universitat Autònoma deBarcelona (UAB), Spain. He has obtained two PhD degrees, the first inElectronics Engineering from the UAB (1999) and the second in Physics from theUniversidad de Buenos Aires, Argentina (2001). Dr. Miranda received numerousscholarships and awards including: Distinguished Visitor Award from RoyalAcademy of Engineering (University College London), German Exchange AcademicAgency (Technical University Hamburg-Harburg), TAN CHIN TUAN (NanyangTechnological University, Singapore), MATSUMAE (Tokyo Institute of Technology,Japan) and WALTON award from the Science Foundation Ireland (Tyndall NationalInstitute), among many others. Dr. Miranda is a Distinguished Lecturer of theElectron Devices Society (EDS-IEEE) since 2001, and member of the advisoryboard of the journal Microelectronics Reliability since 2003. He forms or hasformed part of the Technical or Steering Committees of the main conferences inthe field, including INFOS, IRPS, ESREF, MIEL, E-MRS, ESSDERC and IPFA. He hasauthored 196 peer-review journal papers and conference proceedings, as well as 3 book chapters. His work is devoted to the electrontransport in thin dielectric films: direct and Fowler-Nordheim tunneling,effects of trapped charge, stress-induced leakage current, post-breakdownconduction, resistive switching and memristors.
Contact:Prof. Mario Lanza
