报告人:陈伟 教授

新加坡国立大学
报告题目:Interface Engineering for 2DPhosphorene Based Optoelectronic Devices
报告时间:2016年5月4日(星期三)下午3点
报告地点:909楼一楼B厅
摘要
Black phosphorus(BP), as a fast-emerging two-dimensional (2D) material, stands out from othermembers in 2D family such as graphene and transition metal dichalcogenides(TMDs), and attracts substantial research interests attributed to itsremarkably unique fundamental properties and versatile device applications. Inthis talk, I will summarize and discuss our recent work for interfaceengineered 2D materials phosphorene based field-effect-transistors (FETs) andphoto-transistors, through the combination of in-situ FET device evaluation andphotoelectron spectroscopy investigation. We will particularly emphasize on theelectron and hole doping effect on the transport properties and optoelectronicresponse of phosphorene devices.
简介
Dr. CHEN Wei is currently an Associate Professor (2013 - ) in bothChemistry Department and Physics Department at National University of Singapore(NUS). He received his Bachelor’s degree in Chemistry from Nanjing University(China) in 2001, Ph.D. degree from Chemistry Department at NUS in 2004 underthe supervision of Prof Loh Kian Ping and Prof Andrew T. S. Wee. His currentresearch interests include Molecular-scale Interface Engineering for Molecular,Organic and 2D Materials-based Electronics, and Interface-ControlledNanocatalysis for Energy and Environmental Research. He has also published morethan 200 papers on high-impact peer-reviewed journals in these topics,including 14 invited review articles, and receiving over 5000 citations withH-index of 39. Dr. Chen is a recipient of the Lee Kuan Yew Research Fellowship(2006), Omicron Nanotechnology Award (2009), Hitachi Research Fellowship(2010), Singapore Young Scientist Award (2012), and NUS Young Scientist Award(2013).
联系人:唐建新 教授
(责任编辑:张伶 联系方式:462696345@qq.com)