报告人：Dr. Yury Illarionov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences and
the Institute for Microelectronics of Vienna university of technology
报告题目：Reliability of 2D electronics
报告时间：04:00 p.m., September 30th (Saturday)
报告地点：Conference Room 308, BLDG 910-3F
Abstract
Owing to the fascinating properties of 2D crystals, several attempts to fabricate FETs with 2D channels have been undertaken recently. However, although a huge amount of funding has been already invested into 2D materials research, no commercial device technology is available by now. We argue that in addition to fabrication related issues, a fundamental problem for the transition from device prototypes to industrial 2D FETs is the lack of attention paid to their reliability, which has to be understood for any material system that is to acquire some technological significance. As such, it is to be expected that reliability of next-generation 2D FETs will become a hot research topic in the nearest future. In this talk I will summarize our recent reliability studies for graphene, MoS2 and black phosphorus FETs. Based on our results, I will try to answer a question “How to improve the reliability of 2D devices?”.
Biography
Yury Illarionov was born in Saint-Petersburg in 1988. He received the B.Sc. and M.Sc. degrees from St.-Petersburg State Polytechnical University (Russia) in 2009 and 2011, respectively. Also, in 2012 he received a double Erasmus Mundus M.Sc. degree from Grenoble INP (France) and University of Augsburg (Germany). He also visited IRCELYON (France, 2011) and SIMTech (Singapore, 2012). In 2015 he received the Ph.D. degree from Ioffe Physical-Technical Institute (Russia) and Dr. techn. degree from TU Wien (Austria). Currently, Dr. Yury Illarionov is with Ioffe Physical-Technical Institute and the Institute for Microelectronics (TU Wien). His scientific interests are centered around the reliability of 2D FETs and the injection properties of tunnel-thin insulators. He contributed to about 60 journal papers (including ACS Nano, npj 2D materials and applications and 2D Materials) and conference abstracts.
Contact: Prof. Mario Lanza
责任编辑：杨娟
