题目：

Controllably Interfacing with Ferroelectric Layer: A Strategy for Enhancing Water Oxidation on Silicon by Surface Polarization

作者：

Wei Cui, Zhouhui Xia, Shan Wu, Fengjiao Chen, Yanguang Li* and Baoquan Sun*

单位：

Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren’ai Road, Suzhou, Jiangsu 215123, PR China

摘要：

Silicon (Si) is an important material in photoelectrochemical (PEC) water splitting due to its good light harvesting capability as well as excellent charge transport properties. However, shallow valence band edge of Si hinders its PEC performance for water oxidation. Generally, thanks to deep valence band edge, metal oxides are incorporated with Si to improve the performance, but they also decrease transportation of carriers in the electrode. Here, we integrated a ferroelectric poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) layer with Si to increase the photovoltage as well as the saturated current density. Due to the prominent ferroelectric property from P(VDF-TrFE), the Schottky barrier between Si and electrolyte can be facially tuned by manipulating the poling direction of the ferroelectric domains. The photovoltage is improved from 460 mV to 540 mV with a forward poled P(VDF-TrFE) layer, while the current density increased from 5.8 mA/cm2 to 12.4 mA/cm2 at 1.23 V bias versus reversible hydrogen electrode (RHE).

影响因子：

5.900

分区情况：

1区

链接：

http://pubs.acs.org/doi/abs/10.1021/acsami.5b01393