题目：

Growth of large-area atomically thin MoS₂ film via ambient pressure chemical vapor deposition

作者：

Caiyun Chen,¹ Hong Qiao,¹ Yunzhou Xue,¹ Wenzhi Yu,¹ Jingchao Song,² Yao Lu,¹ Shaojuan Li,¹ and Qiaoliang Bao^1,2,*

单位：

¹Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China

²Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia

摘要：

Atomically thinMoS2 films have attracted significant attention due to excellent electrical and optical properties. The development of device applications demands the production of large-area thin film which is still an obstacle. In this work we developed a facile method to directly grow large-areaMoS2thin film onSiO2 substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grownMoS2 film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on suchMoS2 thin film shows carrier mobility up to3.4cm2V−1s−1 and on/off ratio of 10 ⁵ . The large-area atomically thinMoS2 prepared in this work has the potential for wide optoelectronic and photonic device applications.

影响因子：

新期刊

分区情况：

链接：

https://www.osapublishing.org/prj/abstract.cfm?uri=prj-3-4-110