题目：

Direct probing of electron and hole trapping into nano-floating-gate in organic fieldeffect transistor nonvolatile memories

作者：

Ze-Qun Cui, Shun Wang, Jian-Mei Chen, Xu Gao, Bin Dong,^a) Li-Feng Chi,^a)and Sui-Dong Wang^a)

单位：

Jiangsu Key Laboratory for Carbon Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R. China

摘要：

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

影响因子：

3.515

分区情况：

2区

链接：

http://scitation.aip.org/content/aip/journal/apl/106/12/10.1063/1.4916511