题目：

High Performance Nanostructured Silicon−Organic Quasi p−n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer

作者：

Yuqiang Liu,^† Zhi-guo Zhang,^‡ Zhouhui Xia,^† Jie Zhang,^§ Yuan Liu,^† Feng Liang,^† Yongfang Li,^‡ Tao Song,^† Xuegong Yu,^∥ Shuit-tong Lee,^† and Baoquan Sun*^,†

单位：

^†Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China

^‡Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China

^§Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong, China

^∥State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

摘要：

Silicon−organic solar cells based on conjugated polymers such as poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT: PSS) on n-type silicon (n-Si) attract wide interest because of their potential for cost-effectiveness and high-efficiency. However, a lower barrier height (Φ_b) and a shallow built in potential (V_bi) of Schottky junction between n-Si and PEDOT:PSS hinders the power conversion efficiency(PCE) in comparison with those of traditional p−n junction. Here, a strong inversion layer was formed on n-Si surface by inserting a layer of 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HAT-CN), resulting in a quasi p−n junction. External quantum efficiency spectra, capacitance−voltage, transient photovoltage decay and minority charge carriers life mapping measurements indicated that a quasi p−n junction was built due to the strong inversion effect, resulting in a high Φ_b and V_bi. The quasi p−n junction located on the front surface region of silicon substrates improved the short wavelength light conversion into photocurrent. In addition, a derivative perylene diimide (PDIN) layer between rear side of silicon and aluminum cathodes was used to block the holes from flowing to cathodes. As a result, the device with PDIN layer also improved photoresponse at longer wavelength. A champion PCE of 14.14% was achieved for the nanostructured silicon−organic device by combining HAT-CN and PDIN layers. The low temperature and simple device structure with quasi p−n junction promises cost-effective high performance photovoltaic techniques.

影响因子：

13.344

分区情况：

一区

链接：

http://pubs.acs.org/doi/pdf/10.1021/acsnano.5b05732