题目：

Layered Bismuth Selenide Utilized as Hole Transporting Layerfor Highly Stable Organic Photovoltaics

作者：

Zhongcheng Yuan^a, Zhongwei Wu^a, Sai Bai^b, Wei Cui^a, Jie Liu^a, Tao Song ^a,*, Baoquan Sun ^a,* 

单位：

^aJiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM) & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren’ai Road, Suzhou, Jiangsu 215123, China

^bSolar and Photovoltaic Engineering Research Center, KAUST, Thuwal 23955-6900, Saudi Arabia 

摘要：

Layered bismuth selenide (L-Bi₂Se₃) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi₂Se₃ showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO₃ using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC₆₁BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi₂Se₃. The work function of L-Bi₂Se₃ increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi₂Se₃ exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs.

影响因子：

3.827

分区情况：

2区

链接：

http://www.sciencedirect.com/science/article/pii/S1566119915300264