题目：

Scalable Production of a Few-Layer MoS₂/WS₂ Vertical Heterojunction Array and Its Application for Photodetectors

作者：

Yunzhou Xue,^†,‡,∥ Yupeng Zhang,^‡,∥ Yan Liu,^†,∥ Hongtao Liu,^§ Jingchao Song,^‡ Joice Sophia,† Jingying Liu,^‡ Zaiquan Xu,^‡ Qingyang Xu,^† Ziyu Wang,^‡ Jialu Zheng,^‡ Yunqi Liu,^§ Shaojuan Li,^*,† and Qiaoliang Bao^*,†,‡1*

单位：

^†Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, People’s Republic of China

^‡Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia

^§Beijing National Laboratory for Molecular Sciences Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

摘要：

Vertical heterojunctions of two two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention recently. A variety of heterojunctions can be constructed by stacking different TMDs to form fundamental building blocks in different optoelectronic devices such as photodetectors, solar cells, and light-emitting diodes. However, these applications are significantly hampered by the challenges of large-scale production of van der Waals stacks of atomically thin materials. Here, we demonstrate scalable production of periodic patterns of few-layer WS₂, MoS₂, and their vertical heterojunction arrays by a thermal reduction sulfurization process. In this method, a two-step chemical vapor deposition approach was developed to effectively prevent the phase mixing of TMDs in an unpredicted manner, thus affording a well-defined interface between WS₂ and MoS₂ in the vertical dimension. As a result, large-scale, periodic arrays of few-layer WS₂, MoS₂, and their vertical heterojunctions can be produced with desired size and density. Photodetectors based on the as-produced MoS₂/WS₂ vertical heterojunction arrays were fabricated, and a high photoresponsivity of 2.3 A・W−1 at an excitation wavelength of 450 nm was demonstrated. Flexible photodetector devices using MoS₂/WS₂ heterojunction arrays were also demonstrated with reasonable signal/noise ratio. The approach in this work is also applicable to other TMD materials and can open up the possibilities of producing a variety of vertical van der Waals heterojunctions in a large scale toward optoelectronic applications.

影响因子：

12.881

分区情况：

1区

链接：

http://pubs.acs.org/doi/abs/10.1021/acsnano.5b05596