English 
     
   首 页
   热点信息
学生工作办公室简介
联系我们
语言中心主任致辞
培养方案
专业介绍
招生问答
请加QQ群312279505
廖良生教授课题组和孙宝全教授课题组合作在Advanced Functional Materials上发表论文
发布时间:2016-03-09 点击:1203

题目:

Dopant-free Spiro-Triphenylamine/Fluorene as Hole-Transporting Material for Perovskite Solar Cells with Enhanced Efficiency and Stability

 

 

作者:

Ya-Kun Wang, Zhong-Cheng Yuan, Guo-Zheng Shi, Yong-Xi Li, Qian Li, Fei Hui, Bao-Quan Sun*, Zuo-Quan Jiang* and Liang-Sheng Liao*

 

 

单位:

Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University

 

 

摘要:

Chemical doping is often used to enhance electric conductivity of the conjugated molecule as hole-transporting material (HTM) for the application in optoelectronics. However, chemical dopants can promote ion migration at the electrical field, which deteriorates the device efficiency as well as increases the fabrication cost. Here, two star HTMs, namely 2,2’,7,7’-tetrakis(N,N-di-p-methoxyphenyl-amine)-9,9’-spirobifluorene (Spiro-OMeTAD) and poly(triarylamine) are subjected to chemical combination to yield dopant-free N2,N2,N2’,N2’,N7,N7,N7’,N7’-octakis(4-methoxyphenyl)-10-phenyl-10H-spiro[acridine-9,9’-fluorene]-2,2’,7,7’-tetraamine (SAF-OMe). The power conversion efficiencies (PCEs) of 12.39% achieved by solar cells based on pristine, dopant-free SAF-OMe are among the highest reported for perovskite solar cells and are even comparable to devices based on chemically doped Spiro-OMeTAD (14.84%). Moreover, using a HTM comprised of SAF-OMe with an additional dopant results in a record PCE of 16.73%. Compared to Spiro-OMeTAD-based devices, SAF-OMe significantly improves stability.  

 

影响因子:

11.805

 

 

分区情况:

1

 

 

链接:

http://onlinelibrary.wiley.com/doi/10.1002/adfm.201504245/full

 


Copyright © 2012 苏州大学纳米科学技术学院 All Rights Reserved.
  地址:苏州工业园区仁爱路199号910楼  邮编:215123
您是第 位访问者