题目：

Bias-Stress-Stable Low-Voltage Organic Field-Effect Transistors with Ultrathin Polymer Dielectric on C Nanoparticles

作者：

Jie Liu, Chen-Huan Wang, Chang-Hai Liu, Qin-Liang Li, Xu Gao, and Sui-Dong Wang*

单位：

Jiangsu Key Laboratory for Carbon Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R. China

摘要：

Hybrid gate dielectrics by the deposition of low-k polymers on the sputtered C nanoparticles have been optimized, which show ultrathin, robust and pinhole-free features. Based on the hybrid dielectrics, high-performance low-voltage organic field-effect transistors with excellent bias stress stability are achieved. The magnitude of operating voltage can be down to 2 V, and the drain current can keep almost unchanged in prolonged operation up to 6×10^4 s. The sputtered C nanoparticles play a key role in the formation of a good dielectric, and the control devices without the C nanoparticles cannot work. The present approach is a general method for various low-k polymers and applicable to both p-type and n-type devices. The low-voltage organic field-effect transistors are demonstrated to be compatible with flexible substrates, and thus the dielectric architecture is promising for diverse applications in organic-based flexible, wearable and portable electronics.

影响因子：

新期刊

分区情况：

新期刊

链接：

http://onlinelibrary.wiley.com/doi/10.1002/aelm.201500349/full