题目：

Boron Nitride as Two Dimensional Dielectric: Reliability and Dielectric Breakdown

作者：

Yanfeng Ji,¹ Chengbin Pan,¹ Meiyun Zhang,² Shibing Long,² Xiaojuan Lian,³ Feng Miao,³ Fei Hui,¹ Yuanyuan Shi,¹ Luca Larcher,⁴ Ernest Wu,⁵ and Mario Lanza1,^1*

单位：

¹Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China

²Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

³National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

⁴DISMI, Universita di Modena e Reggio Emilia, 42122 Reggio Emilia, Italy 

⁵IBM Research Division, Essex Junction, Vermont 05452, USA

摘要：

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO₂, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

影响因子：

3.302

分区情况：

2区

链接：

http://dx.doi.org/10.1063/1.4939131