题目：

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive RandomAccess Memories

作者：

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti , Gennadi Bersuker, and Mario Lanza*

单位：

Institute of Functional Nano and Soft Materials 199 Ren-Ai Road Soochow University Suzhou Industrial Park Suzhou 215123 , China

Electronic Engineering Department Universitat Autonoma de Barcelona Building Q, Cerdanyola del Valles 08193 , Spain

摘要：

The link between resistive switching and mechanical strength is probed in situ by using a combination of nanoscale electronic and mechanical tests. In HfO₂-based non-volatile memories, reversible conductive filaments only form at mechanically weak sites. Defective bonding allows easy defect formation and less dramatic forming process, which is essential to allow conductive filament disruption.

影响因子：

新期刊

分区情况：

新期刊

链接：

http://onlinelibrary.wiley.com/doi/10.1002/aelm.201400058/abstract