题目：

High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi₂Se₃/Silicon Heterostructure Broadband Photodetectors

作者：

Hongbin Zhang, Xiujuan Zhang,* Chang Liu, Shuit-Tong Lee, and Jiansheng Jie*

单位：

Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China

摘要：

As an exotic state of quantum matter, topological insulators have promising applications in new-generation electronic and optoelectronic devices. The realization of these applications relies critically on the preparation and properties understanding of high-quality topological insulators, which however are mainly fabricated by high-cost methods like molecular beam epitaxy. We here report the successful preparation of high-quality topological insulator Bi₂Se₃/Si heterostructure having an atomically abrupt interface by van der Waals epitaxy growth of Bi₂Se₃ films on Si wafer. A simple, low-cost physical vapor deposition (PVD) method was employed to achieve the growth of the Bi₂Se₃ films. The Bi₂Se₃/Si heterostructure exhibited excellent diode characteristics with a pronounced photoresponse under light illumination. The built-in potential at the Bi₂Se₃/Si interface greatly facilitated the separation and transport of photogenerated carriers, enabling the photodetector to have a high light responsivity of 24.28 A W⁻¹, a high detectivity of 4.39 × 10¹² Jones (Jones = cm Hz^1/2 W⁻¹), and a fast response speed of aproximately microseconds. These device parameters represent the highest values for topological insulator-based photodetectors. Additionally, the photodetector possessed broadband detection ranging from ultraviolet to optical telecommunication wavelengths. Given the simple device architecture and compatibility with silicon technology, the topological insulator Bi₂Se₃/Si heterostructure holds great promise for high-performance electronic and optoelectronic applications.

影响因子：

13.344

分区情况：

一区

链接：

http://pubs.acs.org/doi/pdf/10.1021/acsnano.6b00272