题目：

Low-Power Organic Field-Effect Transistors and Complementary Inverter Based on Low-Temperature Processed Al₂O₃ Dielectric

作者：

Qi-Jun Sun¹, Jun Peng¹, Wen-Hua Chen, Xiao-Jian She, Jie Liu, Xu Gao, Wan-Li Ma**, Sui-Dong Wang*

单位：

Jiangsu Key Laboratory for Carbon Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R. China

摘要：

Organic-based complementary inverter could be a key component in future flexible and portable electronic products, which require low-power operation, high operating stability and flexible compatibility at the same time. A simple method for making excellent Al₂O₃ gate dielectric is developed toward the target, and it is a low-cost solution process with a low annealing temperature compatible with plastic substrates. Utilizing the Al₂O₃ dielectric, both p-type and n-type low-voltage organic field-effect transistors (OFETs) are realized. The device operating voltage is down to ±3 V, and the On/Off ratio is up to 10⁶. The hole and electron field-effect mobilities are 2.7 cm²/V and 0.2 cm²/V, respectively, and the subthreshold swing is as small as about 110 mV/decade. The high quality of the Al₂O₃ dielectric results in high operating stability of the devices. The p-type and n-type OFETs are integrated to achieve a low-power complementary inverter with a large gain, which can be successfully fabricated on a flexible substrate.

影响因子：

3.827

分区情况：

2区

链接：

http://www.sciencedirect.com/science/article/pii/S1566119916301604

(责任编辑：杨阳，联系方式：yangyangcnst@suda.edu.cn)