题目：

Physical Implication of Transition Voltage in Organic Nano-Floating-Gate Nonvolatile Memories

作者：

Shun Wang, Xu Gao^a, Ya-Nan Zhong, Zhong-Da Zhang, Jian-Long Xu, and Sui-Dong Wang^a

单位：

Jiangsu Key Laboratory for Carbon Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R. China

摘要：

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

影响因子：

3.302

分区情况：

二区

链接：

http://scitation.aip.org/content/aip/journal/apl/109/2/10.1063/1.4958738

（责任编辑：向丹婷 联系方式：dtxiang@suda.edu.cn）