题目：

Switching Hole and Electron Transports of Molecules on Metal Oxides by Energy Level Alignment Tuning

作者：

Zhong-Min Bao, Rui-Peng Xu, Chi Li, Zhong-Zhi Xie, Xin-Dong Zhao, Yi-Bo Zhang, Yan-Qing Li, and Jian-Xin Tang*

单位：

Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China

摘要：

Charge transport at organic/inorganic hybrid contacts significantly affects the performance of organic optoelectronic devices because the unfavorable energy level offsets at these interfaces can hinder charge injection or extraction due to large barrier heights. Herein, we report a technologically relevant method to functionalize a traditional hole-transport layer of solution-processed nickel oxide (NiOx) with various interlayers. The photoemission spectroscopy measurements reveal the continuous tuning of the NiOx substrate work function ranging from 2.5 to 6.6 eV, enabling the alignment transition of energy levels between the Schottky−Mott limit and Fermi level pinning at the organic/composite NiOx interface. As a result, switching hole and electron transport for the active organic material on the composite NiOx layer is achieved due to the controlled carrier injection/extraction barriers. The experimental findings indicate that tuning the work function of metal oxides with optimum energy level offsets can facilitate the charge transport at organic/electrode contacts.

影响因子：

6.723

分区情况：

一区

链接：

http://pubs.acs.org/doi/abs/10.1021/acsami.6b06999