题目：

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II�VI Nanostructures

作者：

Feifei Xia,^†,⊥ Zhibin Shao,^†,⊥ Yuanyuan He,^†,‡ Rongbin Wang,^†,§ Xiaofeng Wu,^† Tianhao Jiang,^†Steffen Duhm,^† Jianwei Zhao,^‡ Shuit-Tong Lee,^† and Jiansheng Jie*^,†

单位：

^†Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials &

Devices, Soochow University, Suzhou 215123, Jiangsu, People’s Republic of China

^‡Materials and Textile Engineering College, Jiaxing University, Jiaxing 314001, Zhejiang People’s Republic of China

^§Institut für Physik, Humboldt-Universitaẗ zu Berlin, 12489 Berlin, Germany

摘要：

Wide band gap II−VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p−n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II−VI nanostructures via surface charge transfer doping (SCTD)using high work function transition metal oxides such as MoO₃, WO₃, CrO₃, and V₂O₅ as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II−VI nanostructures, leading to accumulation of positive charges (holes injection) in the II−VI nanostructures. As a result, Fermi levels of the II−VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II−VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II−VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II−VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II−VI nanostructures via realization of complementary doping.

影响因子：

13.344

分区情况：

一区

链接：

http://pubs.acs.org/doi/pdf/10.1021/acsnano.6b05884