题目：

Correlation between active layer thickness and ambient gas stability in IGZO thin-flm transistors

作者：

Xu Gao^1,2, Meng-Fang Lin², Bao-Hua Mao^1,4, Maki Shimizu², Nobuhiko Mitoma², Takio Kizu², Wei Ou-Yang², Toshihide Nabatame³, Zhi Liu⁴, Kazuhito Tsukagoshi^2,5 and Sui-Dong Wang^1,5

单位：

¹ Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, People’s Republic of China

² International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

³ MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

⁴ State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China

摘要：

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O₂/air. The device with a thick IGZO layer shows similar electron mobility in O₂/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O₂/air due to the electron transfer to adsorbed gas molecules. The O₂ adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.

影响因子：

2.772

分区情况：

2区

链接：

http://iopscience.iop.org/article/10.1088/1361-6463/50/2/025102/meta

责任编辑：向丹婷 联系方式：dtxiang@suda.edu.cn