题目：

Controlled surface doping for operating stability enhancement in organic field-effect transistors

作者：

Chen-Huan Wang, Xu Gao**, Ya-Nan Zhong, Jie Liu, Jian-Long Xu, Sui-Dong Wang*

单位：

Jiangsu Key Laboratory for Carbon Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R. China

摘要：

The introduction of an inorganic/organic or organic/organic heterojunction in the pentacene-based organic field-effect transistors is demonstrated to be in favor of improving their operating stability.

The heterojunction-induced p-type doping of pentacene is nondestructive, and it can be controlled by varying the adlayer thickness. The bias stress effects are compared at similar surface carrier density for the doped and undoped devices, and the current flow in the pentacene bulk is found to be more stable than that in the conducting channel close to the gate dielectric. In the initial stage of the bias stress

characteristics, the carrier trapping associated with the gate dielectric is mainly responsible for the current instability. On the other hand, in the prolonged stage, the carrier trapping in the active layer may become dominant.

影响因子：

3.417

分区情况：

2区

链接：

http://www.sciencedirect.com/science/article/pii/S1566119916305900

责任编辑：向丹婷 联系方式：dtxiang@suda.edu.cn