题目：

Fabrication of scalable and ultralow power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS₂ sheets

作者：

Xu Jing¹, Emanuel Panholzer^1,2, Xiaoxue Song¹, Enric Grustan-Gutierrez¹, Fei Hui¹, Yuanyuan Shi¹, Guenther Benstetter², Yury Illarionov^3,4, Tibor Grasser³ and Mario Lanza^1,* 

单位：

¹Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-AiRoad, Suzhou 215123, China.

²Deggendorf Institute of Technology, Edlmairstrasse 6 & 8, 94469 Deggendorf, Germany.

³Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria.

⁴Ioffe Physical-Technical Institute, Polytechnicheskaya 26, 194021 St-Petersburg, Russia.

摘要：

During the last decade an unprecedented amount of funding has been invested on the study of the fundamental properties of two dimensional (2D) materials. Most of these studies have been mainly developed using research oriented techniques, such as mechanical exfoliation and electron beam lithography. Despite the large amount of information gained, these methods are not scalable, which impedes the mass production of electronic devices. The raising pressure for recovering the investment has shifted the global interest towards scalable routes of growing and manipulating the 2D materials, aiming to build up devices with realistic possibilities of commercialization. Here we show the fabrication of MoS₂ photodetectors using an entirely scalable process, which is based on chemical vapor deposition (CVD), photolithography, electron beam evaporator and plasma ion etching. The devices show strikingly low power consumption (3.25×10⁻⁹ W under illumination) and high light/dark current ratios (up to 170) which, to the best of our knowledge, are the best ever reported in the literature for MoS₂ phototransistors. These performances are related to the small domain size of the polycrystalline monolayer MoS₂ sheets (164±54 nm in diameter). We also successfully minimized the hysteresis by introducing an annealing step during the fabrication process. The different parameters to be selected during the CVD growth process (precursor, gas carrier, pressure, temperature and time) offer a unique framework for tuning the properties of these devices. These results should be of interest to the entire community working on 2D materials based electronic devices.

影响因子：

11.553

分区情况：

一区

链接：

http://ac.els-cdn.com/S2211285516304517/1-s2.0-S2211285516304517-main.pdf?_tid=31662344-f9bf-11e6-a3f9-00000aacb35d&acdnat=1487851204_2177ea1e7226a94d387eb88dbf66711e

责任编辑：向丹婷 联系方式：dtxiang@suda.edu.cn