题目：

Room-Temperature Processed Nb₂O₅ as the Electron Transporting Layer for Efficient Planar Perovskite Solar Cells

作者：

Xufeng Ling,¹Jianyu Yuan,¹ Dongyang Liu,¹ Yongjie Wang,¹ Yannan Zhang,¹ Si Chen,¹ Haihua Wu,¹ Feng Jin,³ Fupeng Wu,¹ Guozheng Shi,¹ Xun Tang,¹ Jiawei Zheng,¹Shengzhong (Frank) Liu,² Zhike Liu*^,2 and Wanli Ma*^,2

单位：

¹Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China

²Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China

³Shanghai Ultra-precision Optical Manufacturing Engineering Research Center, and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

摘要：

In this work, we demonstrate high-efficiency planar perovskite solar cells (PSCs) using room-temperature sputtered niobium oxide (Nb₂O₅) as the electron transporting layer (ETL). Widely spread ETL like TiO₂ often requires high-temperature (> 450 oC) sintering, which is not desired for the fabrication of flexible devices. The as sputtered amorphous Nb₂O₅ ETL (labeled as a-Nb₂O₅)without any heat treatment can lead to a best powerconversion efficiency (PCE) of 17.1% for planar PSCs. Interestingly, the crystalline Nb₂O₅ (labeled as c-Nb₂O₅) with high-temperature (500 oC) annealing results in very similar PCE of 17.2%, indicating the great advantage of a-Nb₂O₅ in energy saving. We thus carried out systematical investigation on the properties of the amorphous a-Nb₂O₅ film. The Hall Effect measurements indicate both high mobility and conductivity of the a-Nb₂O₅ film. Kelvin probe force microscopy (KPFM) measurements define the Fermi levels of a-Nb₂O₅ and c-Nb₂O₅ as -4.31 eV and -4.02eV, respectively, which allow efficient electron extraction at the Nb₂O₅/perovskite interface regardless of the additional heating treatment on Nb₂O₅ film. Benefitting from the low-temperature process, we further demonstrated flexible PSCs basedon a-Nb₂O₅ with a considerable PCE of 12.1%. The roomtemperature processing and relatively high device performance of a-Nb₂O₅ suggest great potential for its application in optoelectrical devices.

影响因子：

7.504

分区情况：

一区

链接：

http://pubs.acs.org/doi/abs/10.1021/acsami.7b05113