题目：

Highly Efficient Quantum-Dot Light Emitting Diodes with Sol-Gel ZnO Electron Contact

作者：

Yue-Qi Liu,¹ Dan-Dan Zhang,^1,* Huai-Xin Wei,² Qing-Dong Ou,¹ Yan-Qing Li,¹ and Jian-Xin Tang¹

单位：

¹ Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China

² Jiangsu Key Laboratory for Environment Functional Materials, School of Chemical Biology and Materials Engineering, Suzhou University of Science and Technology, Suzhou 215009, China

摘要：

We demonstrated an efficient inverted CdSe/CdS/ZnS quantum dot light emitting diode (QLED) using sol-gel ZnO (s-ZnO) as the electron-injection layer (EIL). The device performance is comparable to that of a device based on the common used nanoparticle ZnO (n-ZnO) EIL. The peak efficiency (12.5 cd/A) and luminance (13000 cd/m²) for the s-ZnO based device was found to be similar to the n-ZnO based device (11.2 cd/A and 15000 cd/m²). The morphology properties of these two types of ZnO films were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. A very smooth surface was achieved for the s-ZnO film. Moreover, the quantum dot (QD) layer on the s-ZnO also possesses high quality with a close packed structure.

影响因子：

2.591

分区情况：

一区

链接：

https://www.osapublishing.org/ome/abstract.cfm?uri=ome-7-7-2161