题目：

One-Step Fabrication of CdS:Mo�CdMoO₄ Core�Shell Nanoribbons for Nonvolatile Memory   Devices with High Resistance Switching

作者：

Ni Zheng, Zhibin Shao,* Feifei Xia, Tianhao Jiang, Xiaofeng Wu, Xiujuan Zhang,* Jiansheng Jie* and   Xiaohong Zhang

单位：

Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology (Nano-CIC), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.

摘要：

Nano-field-effect transistor (nano-FET)-based nonvolatile memory (NVM) devices fabricated from one-dimensional (1D) nanostructures  have attracted much attention due to their superior memory performance. However, the construction of NVM devices is relatively complex due to the multi-step process needed to fabricate the trapping/tunneling layers. Here, we report a one-step fabrication of CdS:Mo�CdMoO₄ core�shell nanoribbons (NRs) for high-performance nano-FET-based NVM devices. The CdMoO₄ shell could serve as both the charge storage media and tunneling layer, thus greatly facilitating the device construction. The resultant NVM devices exhibited a large memory window of 60 V as well as a long retention time of 3600 s. Significantly, the devices showed an excellent resistance switching behavior with a current ON/OFF ratio as high as 106, which is larger than those of most 1D nanostructure-based nano-FET memories. A mechanism associated with defect states caused by oxygen vacancies in the CdMoO₄ shell was proposed to interpret the memory characteristics. Given the excellent memory performance, along with the simple one-step fabrication process, CdS:Mo�CdMoO₄ NR-based NVM devices will have important applications in new-generation high-performance NVM devices.

影响因子：

5.256

分区情况：

一区

链接：

http://pubs.rsc.org/en/content/articlelanding/2017/tc/c7tc01230f#!divAbstract