| 作者: | Vincenzo Pecunia,1,2* Mark Nikolka1, Antony Sou1, lyad Nasrallah1, Atefeh Y.Amin1, lain McCulloch3 and Henning Sirringhaus1* |
| 单位: | 1Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, UK. 2Institute of Functional Nano & Soft Materials(FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren’ai Road, Suzhou,215123 Jiangsu, P.R.China. 3Department of Chemistry, Imperial College London, South Kensington Campus, London SW7 2AZ, UK. Present address:Pragmatic Printing Ltd, Unit 322, Cambridge Science Park, Milton Road, Cambridge CB4 0WG, UK. |
| 摘要: | Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5V with power dissipation of 11μ |