题目：

Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

作者：

Fei Hui^1,2‡ , Wenjing Fang²‡ , Wei Sun Leong^2,3 , Tewa Kpulun⁴ , Haozhe Wang² , Hui Ying Yang³ , Marco A. Villena^1,5 , Gary L. Harris⁴ , Jing Kong⁵ , Mario Lanza ^1,*

单位：

¹Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, Suzhou, 215123, China.

²Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 021139, USA.

³Pillar of Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore.

⁴Department of Electrical and Computer Engineering, Howard University, Washington DC, 20059, USA.

⁵Department of Materials Science and Engineering, Stanford University, CA, 94305, USA.

摘要：

Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscope (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability of the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies.

影响因子：

7.504

分区情况：

一区

链接：

http://pubs.acs.org/doi/10.1021/acsami.7b09417