题目：

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

作者：

Lanlan Jiang¹‡,  Yuanyuan Shi^1,2‡, Fei Hui^1,3‡, Kechao Tang⁴, Qian Wu¹, Chengbin Pan¹, Xu Jing^1,5, Hasan Uppal⁶, Felix Palumbo⁷, Guangyuan Lu⁸, Tianru Wu⁸, Haomin Wang⁸, Marco A. Villena¹, Xiaoming Xie^8,9, Paul C McIntyre⁴, and Mario Lanza^1,*

单位：

¹Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, 199 Ren-AiRoad, Suzhou, 215123, China

²Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA

³Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

⁴Department of Materials Science and Engineering, Stanford University, California, USA

⁵Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA

⁶Microelectronics and nanostructures, The University of Manchester, Sackville Street, Manchester M13 9PL, UK

⁷National Scientific and Technical Research Council (CONICET), UTN-CNEA, Godoy Cruz 2290, Buenos Aires, Argentina

⁸State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

⁹School of Physical Science and Technology, Shanghai Tech University, 319 Yueyang Road, Shanghai 201210, China

^‡Equal contribution

摘要：

Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two dimensional (2D) layered materials have superb electronic, physical, chemical, thermal and optical properties, and they can be effectively used to provide additional performances (flexibility, transparency). 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics and dielectric breakdown process are still not understood. In this work the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed at the nanoscale and the device level, and the experimental results are studied via theoretical models. It is found that, under an electrical stress, local charge accumulation and charge trapping/de-trapping are the onset mechanisms for dielectric breakdown (BD) formation. By means of conductive atomic force microscopy (CAFM) the BD event is triggered at several locations on the surface of different dielectrics (SiO₂, HfO₂, Al₂O₃, multilayer h-BN and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with a one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally-driven catastrophic BD. These results point monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.

影响因子：

7.504

分区情况：

一区

链接：

http://pubs.acs.org/doi/10.1021/acsami.7b10948