题目：

Model for Multi-Filamentary Conduction in Graphene/Hexagonalboron-Nitride/Graphene based Resistive Switching Devices

作者：

Chengbin Pan¹, Enrique Miranda², Marco A Villena¹, Na Xiao¹, Xu Jing¹,  Xiaoming Xie³, Tianru Wu³, Fei Hui¹, YuanyuanShi⁴, and Mario Lanza^1,5*

单位：

¹Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-AiRoad, Suzhou, 215123, People’s Republic of China

²Electronic Engineering Department, Universitat  Autonoma de Barcelona, 08193 Bellaterra, Spain

³State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China

⁴Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States of America

⁵Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

摘要：

Despite the enormous interest raised by graphene and related materials, recent global concern about their real usefulness in industry has raised, as there is a preoccupying lack of 2D materials based electronic devices in the market. Moreover, analytical tools capable of describing and predicting the behavior of the devices (which are necessary before facing mass production) are very scarce. In this work we synthesize a resistive random access memory (RRAM) using graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) van der Waals structures, and we develop a compact model that accurately describes its functioning. The devices were fabricated using scalable methods (i.e. CVD for material growth and shadow mask for electrode patterning), and they show reproducible resistive switching (RS). The measured characteristics during the forming, set and reset processes were fitted using the model developed. The model is based on the nonlinear Landauer approach for mesoscopic conductors, in this case atomic-sized filaments formed within the 2D materials system. Besides providing excellent overall fitting results (which have been corroborated in log�log, log�linear and linear�linear plots), the model is able to explain the dispersion of the data obtained from cycle-to-cycle in terms of the particular features of the filamentary paths, mainly their confinement potential barrier height.

影响因子：

7.367

分区情况：

一区

链接：

http://iopscience.iop.org/article/10.1088/2053-1583/aa7129/meta;