题目：

An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors

作者：

Fu-Peng Wu,^a Hio-Ieng Un,^b Yongxi Li,^a* Hailiang Hu,^a Yi Yuan,^a Bin Yang,^c Kai Xiao,^c Wei Chen,^d JieYu Wang,^b Zuo-Quan Jiang,^a* Jian Pei^b and Liang-Sheng Liao^a

单位：

^aInstitute of Functional Nano & Soft Materials (FUNSOM) Soochow University, Suzhou, 215123 (China)

^bBeijing National Laboratory for Molecular Sciences, Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering,Peking University, Beijing, 100871 (China)

^cCenter for Nanophase Materials Sciences, Oak Ridge National  Laboratory, Oak Ridge, 37831 (USA)

^dScience Division, Argonne National Laboratory, 9700 Cass Avenue, Lemont, Illinois, 60439 (USA)

摘要：

A new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich  donor indacenodithiophene (IDT) with cyclohepta-4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) (-6.24 eV) and the lowest unoccupied molecular orbit (LUMO) (-2.57 eV) energy levels. Organic field effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm²V^-1s^-1, which indicates that the BBI is a promising n-type building block for optoelectronics.

影响因子：

5.317

分区情况：

二区

链接：

http://onlinelibrary.wiley.com/doi/10.1002/chem.201703415/epdf