题目：

Cu-Doped Nickel Oxide Prepared using a Low Temperature Combustion Method as a Hole Injection Layer for High-performance OLEDs

作者：

Yi-Huan Li,^a Xun Lu, ^a Rongbin Wang,^a Yu-Yang Ma,^a Steffen Duhm,^a Man-Keung Fung*^a,b

单位：

^aJiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano& Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P.R. China.

^bInstitute of Organic Optoelectronics, Jiangsu Industrial Technology   Research Institute (JITRI), 1198 Fenhu Dadao, Wujiang, Suzhou, Jiangsu,  P.R. China

摘要：

Solution-processed Cu doped nickel oxide (Cu-NiO_x) is used as a hole injection layer (HIL) in phosphorescent green organic light-emitting diodes (OLEDs). Hole injection materials are very important for achieving high performance OLEDs. Herein, solution-processed Cu doped NiO_x prepared using a combustion method is demonstrated as the HIL in OLEDs. Nickel oxide (NiO_x) thin films incorporated with p-type Cu dopants resulted in a significantly improved conductivity and hole-injection capability. The UV-ozone treated NiO_x shows significantly better hole injection than that without being treated by UV-ozone. Our results show that phosphorescent green OLEDs with UV-ozone treated Cu:NiO_x show a maximum current efficiency of 85.3 cd A^-1, which is remarkably higher than the conventional device based on poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDO T:PSS) which has a maximum current efficiency of 68.3 cd A^-1 .

影响因子：

5.256

分区情况：

一区

链接：

http://pubs.rsc.org/en/content/articlepdf/2017/tc/c7tc03884d?page=search