报告人：Prof. Udo Schwingenschlögl
Materials Science & Engineering at King Adbullah University of
Science and Technology (KAUST)
报告题目：Substrate effects on silicene and how to exploit them
报告时间：01:00 p.m., October 19th (Thursday)
报告地点：Conference Room 308, BLDG 910-3F
Abstract
Silicene is the Si analogue of graphene with the same honeycomb structure and linear dispersions of the π and π* bands at the K point of the Brillouin zone. It is predicted to realize a buckled structure, due to sp2-sp3 hybridization, and is compatible with the current Si-based nano-electronics. Silicene yet has not been achieved by mechanical exfoliation but can be deposited on metallic substrates such as Ag(111), Ir(111), and ZrB2(0001). Regrettably, strong interaction with these substrates destroys the Dirac physics. Layered materials such as MgBr2(0001), MoX2, and GaX2 (X = S, Se, and Te), on the other hand, might preserve the characteristic electronic features. The effects of different substrates on silicene will be compared and evaluated with respect to technological requirements.
Biography
Udo Schwingenschlögl is a Professor of Materials Science & Engineering at King Abdullah University of Science and Technology (KAUST). His research interests in condensed matter physics and first-principles materials modeling focus on two-dimensional materials, interface and defect physics, correlated materials, thermoelectric materials, metal-ion batteries, nanoparticles, and quantum transport.
Contact: Prof. Mario Lanza
责任编辑：杨娟
