题目：

Addressable growth of oriented organic semiconductor ultra-thin film on hydrophobic surface by direct dip-coating

作者：

Binghao Wang ^a,b, Tao Zhu ^a, Lizhen Huang ^{a, *}, Teck Lip Dexter Tam ^b, Zequn Cui ^a, Jingqiang Ding ^a,Lifeng Chi ^{a, *}

单位：

^a Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China

^b Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA

摘要：

Oriented organic field-effect transistor (OFET) stripe arrays on hydrophobic substrates were fabricated by fast dip-coating technique. The addressable growth was achieved by decreasing surface energy of the channel areas with respect to the electrodes via hydrophobic treatment. The higher surface energy of the electrodes allows solution to adhere and then organic semiconductors nucleate and bridge the channels after evaporation of the solvent. Area-selective behaviour can be controlled by adjusting surface property of transistor channel, geometry features of the gold electrodes, pulling speed and evaporation atmosphere. The mechanism behind is the competition between receding of the solution and evaporating of the solvent that generate the organic semiconductor films on the substrate. The patterned bottom-contact transistor arrays exhibit carrier mobility of 2.0 × 103 cm² V^-1 s^-1, while no field-effect characteristics can be detected for bottom-contact arrays without hydrophobic treatment. Such reliable, fast and solution-based patterned OFET arrays are highly desirable for large-scale and low-cost production.

影响因子：

3.676

分区情况：

2区

链接：

http://www.sciencedirect.com/science/article/pii/S1566119915002359