题目：

High Performance Blue Quantum Dot Lightemitting Diodes Employing Polyethylenimine Ethoxylated as the Interfacial Modifier

作者：

Ying-Li Shi^a, Feng Liang^a, Yun Hu^a, Ming-Peng Zhuo^a, Xue-Dong Wang*^,a and Liang-Sheng Liao*^,a,b

单位：

^aJiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China.

^bInstitute of Organic Optoelectronics, JITRI, Wujiang, Suzhou, Jiangsu 215211, China

摘要：

Efficient electron-injection into the emitting layer (EML) plays a pivotal role in the fabrication of high performance blue quantum dot light-emitting diodes (QLEDs). Herein, we reduce the electron transporting barrier at the ITO/ETL(electron-transporting layer)interface from 0.7 eV to 0.4 eV by spin-coating a polyethylenimine ethoxylated (PEIE) film (8 nm) on the ITO substrate. Meanwhile, the electron-injection barrier was reduced from 0.5 to 0.1 eV at the ETL/QD interface by employing the incorporation of PEIE (0.1 wt%)into a ZnO layer. These above two interfacial modifications jointly decrease the electron barrier and make the electron transportation easier. As a result, the optimized QLEDs with the 460 nm emission peak exhibit a maximum external quantum efficiency (EQE) of 7.85%, which is enhanced by 1.4 fold compared with the reference device (5.68%). It is demonstrated that the facile interfacial modification by the organic polymer PEIE contributes to the fabrication of high-efficiency blue QLEDs.

影响因子：

7.367

分区情况：

一区

链接：

http://pubs.rsc.org/en/content/articlehtml/2017/nr/c7nr04542e