题目：

Ultrahigh Speed and Broadband Few-Layer MoTe₂/Si 2D-3D Heterojunction-Based Photodiodes Fabricated by Pulsed Laser Deposition

作者：

Zhijian Lu,¹ Yan Xu,¹ Yongqiang Yu,^1,* Kewei Xu,¹ Jie Mao,² Gaobin Xu,¹ Yuanming Ma,¹ Di Wu,³ and Jiansheng Jie^2,*

单位：

¹School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.

²Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.

³School of Physics and Microelectronics, Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, P. R. China.

摘要：

2D transition metal dichalcogenides are promising candidates for high-performance photodetectors. However, the relatively low response speed as well as the complex transfer process hinders their wide applications. Herein, for the first time, the fabrication of a few-layer MoTe₂/Si 2D-3D vertical heterojunction for high-speed and broadband photodiodes by a pulsed laser deposition technique is reported. Owing to the high junction quality, ultrathin MoTe₂ film thickness, and unique vertical n-n heterojunction structure, the photodiode exhibits excellent device performance in terms of a high responsivity of 0.19 A W^-1 and a large detectivity of 6.8×10¹³ Jones. The device is also capable of detecting a broadband light with wavelength spanning from 300 to 1800nm. More importantly, the device possesses an ultrahigh response speed up to 150 ns with a 3-dB electrical bandwidth approaching 0.12GHz. This work paves the way toward the fabrication of novel 2D-3D heterojunctions for high-performance, ultrafast photodetectors.

影响因子：

15.621

分区情况：

一区

链接：

https://onlinelibrary.wiley.com/doi/10.1002/adfm.201907951

责任编辑：向丹婷