题目：

Passivated Perovskite Crystallization via g-C3N4 for High-Performance Solar Cells

作者：

Lu-Lu Jiang^1,2, Zhao-Kui Wang,¹* Meng Li¹, Cong-Cong Zhang¹, Qing-Qing Ye¹, Ke-Hao Hu¹, Ding-Ze Lu², Peng-Fei Fang,²* and Liang-Sheng Liao¹*

单位：

¹Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Institute of Functional Nano & Soft Materials (FUNSOM) Soochow UniversitySuzhou 215123, China

²Department of Physics and Key Laboratory of Artificial Micro- an Nanostructures of Ministry of Education Wuhan UniversityWuhan 430072, China

摘要：

Organometallic halide perovskite films with good surface morphology and large grain size are desirable for obtaining high-performance photovoltaic devices. However, defects and related trap sites are generated inevitably at grain boundaries and on surfaces of solution-processed polycrystalline perovskite films. Seeking facial and efficient methods to passivate the perovskite film for minimizing defect density is necessary for further improving the photovoltaic performance. Here, a convenient strategy is developed to improve perovskite crystallization by incorporating a 2D polymeric material of graphitic carbon nitride (g-C3N4) into the perovskite layer. The addition ofg-C3N4 results in improved crystalline quality of perovskite film with large grain size by retarding the crystallization rate, and reduced intrinsic defect density by passivating charge recombination centers around the grain boundaries. In addition,g-C3N4 doping increases the film conductivity of perovskite layer, which is beneficial for charge transport in perovskite light-absorption layer. Consequently, a champion device with a maximum power conversion efficiency of 19.49% is approached owing to a remarkable improvement in fill factor from 0.65 to 0.74. This finding demonstrates a simple method to passivate the perovskite film by controlling the crystallization and reducing the defect density.

影响因子：

12.124

分区情况：

一区

链接：

http://onlinelibrary.wiley.com/doi/10.1002/adfm.201705875/epdf

责任编辑：向丹婷