题目：

Enabling Ultra‐Narrow‐Band Deep‐Blue Light‐Emitting Diode Via Trapping Injected Holes by Carbon Dots

作者：

Jian Shen¹, Tianyang Zhang¹, Jiacheng Li¹, Zenan Li¹, Haizhou Yu¹, Weijie Yuan¹, Hui Huang¹, Yang Liu¹*, and Zhenhui Kang^1,2*

单位：

¹Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China.

²Macao Institute of Materials Science and Engineering (MIMSE), MUST−SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macau 999078, China.

摘要：

Narrow-band deep-blue light-emitting diodes (LEDs) (CIE_y coordinate<0.08, full width at half maximum (FWHM)<20 nm) are important for the next generation of LED-based displays. It remains a significant challenge for the design of narrow-band deep-blue emitters. Herein, a new strategy is proposed for constructing narrow-band deep-blue LEDs that are not dependent on the narrow-band deep-blue emitter, but only need to dope n-type carbon dots (n-CDs) in the active emission layer (EML) of the wide-band blue LEDs. The n-CDs-LEDs show an ultra-narrow deep-blue emission at 430 nm with the color coordinates of (0.15, 0.04) and the FWHM of 19 nm. Wherein the EML is constructed by doping n-CDs in Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl) diphenylamine) (TFB), which neither changes the band structure of TFB nor produces new energy levels. Transient photovoltage (TPV) and various photoelectrochemical characterizations jointly reveal that n-CDs can trap holes to realize the carrier injection into a single energy level of TFB and achieve ultra-narrow deep-blue light emission. This work provides a brand-new and simple way to realize the narrow-band deep-blue LEDs.

影响因子：

18.5

分区情况：

一区

链接：

https://doi.org/10.1002/adfm.202408239

责任编辑：杜欣